20V P沟道增强型MOS管

20V P沟道增强型MOSFET(MOS管)

20V P-Channel Enhancement-Mode MOSFET

VDS= -20V

20V P沟道增强型MOS管

RDS(ON), Vgs@-4.5V, Ids@-4.7A = 70mΩRDS(ON), Vgs@-2.5V, Ids@-1.0A = 110mΩ

3

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

1

we declare that the material of product

20V P沟道增强型MOS管

compliance with RoHS requirements.

2

SOT– 23 (TO–236AB)

▼ Simple Drive Requirement▼ Small Package Outline▼Surface Mount Device

20V P沟道增强型MOS管

Ordering Information

Marking

XP344LXP344L-3G

Shipping

Reel Reel

P34P34

= 25oC unless otherwise noted)Maximum Ratings and Thermal Characteristics (TA

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain CurrentPulsed Drain Current 1) Maximum Power Dissipation

TA = 25C TA = 75C

Operating Junction and Storage Temperature RangeJunction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance (PCB mounted)

2)

oo

SymbolVDSVGSIDIDMPDTJ, TstgRqJCRqJA

Limit-20±12-4.7-201.10.7-55 to 150

UnitVAW

o

C

o

110

C/W

Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation

2. 1-in2 2oz Cu PCB board

3. Guaranteed by design; not subject to production testing

http://www.mianfeiwendang.com

Tel:400 660 8382

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